Una Piccola Presentazione

Felice Russo received the M.S. degree in Physics from the University "Federico II", Naples, Italy, in 1990 discussing the doctorial thesis on neutrinos physics conducted at the European Center for Nuclear Research (CERN - Geneve). He then joined Texas Instruments, Avezzano, Italy, where is a Member of the Technical Staff and is currently responsible for Yield Enhancement and Process Integration of 0.5 um Flash Memory. His interests include Yield Modeling, Semiconductor processing, Neural networks, Plasma damage and the use of Silicon Reach Oxide as electron injector for Nonvolatile Memory applications. In 1997 he has been appointed from Rome University "La Sapienza" , Department of Electrical Engineering, as lecturer of "Materials and Technologies for semiconductor devices" and in 1998 as lecturer of "Evolution of DRAM technology", "Floating gate Flash memory overview" and "Plasma Etching".Felice is a IEEE member and author of several articles/papers/patents.

Pubblications

• Felice Russo et al., Investigation on capillaries filled with liquid scintillator for high resolution particle tracking, Nuclear Intruments and Methods in Physics Research, A30, 1991

• Felice Russo et al., Plasma Damage Correlation of Predatorâ Data with 0.5 um DRAM Device Scribe Structures, TI Technical Activity Report, 1998
• Felice Russo et al., Effect of HCl/HBr purity on polysilicon etching, Texas Inst. European Technical Conference, Nice, March 1995

• Felice Russo et al., High Planarization degree by Metal-Filled Interconnecting Grooves, TI Tecnhical Activity Report , March 1996

• Felice Russo, Plasma Etching Traning Course, Texas Instruments, May 1995.

• Felice Russo, LDD process integration semplification for DRAM, TI Technical Activity Report, April 1995

• Felice Russo, Evolution of DRAM cell technology, TI Technical Activity Report, May 1998

• Felice Russo et al., Pipeline defects characterization and reduction, TI Technical Activity Report, Sept. 1997

• Felice Russo et al., Semiconductor Device Modeling using a Neural Network, to be published on TI Technical Journal

• Felice Russo et al., Moat Etch Impact on Flash EPROM Technology, to be published on TI Technical Journal

• Felice Russo, Fili di vetro per indagare gli atomi, Scienza & Vita, Dic. 1990

• Felice Russo, Radiazione di Sincrotrone, Scienza & Vita, Dic. 1989

• Felice Russo, Come le radiazioni aiutano il restauro, Scienza & Vita, Dic. 1989

• Felice Russo, La termoluminescenza, Scienza & Vita, Dic. 1988

• Felice Russo, Automi cellulari, List, Dic. 1988

• Felice Russo, On circular numbers, submitted to Journal of Integer Sequences.

• Felice Russo and Fernanda Irrera, Off-stechiometric silicon oxides for applications in low-voltage Flash memories, INFOS-99 Germany, 06/17/99.

Patents.

• Felice Russo e Giuseppe Miccoli, Procedimento per la realizzazione di configurazioni di polisilicio drogato in transitors MOS. Application #: 97830233.9, 21 Maggio 97

• Felice Russo et al., Perfezionamento nel procedimento di attacco chimico anisotropo dell’ossido di silicio, in particolare nella fabbricazione di dispositivi Flash EEPROM a transitors FAMOS, Application #: RM97A000430, 14 Luglio 1997

Felice Russo et al., Procedimento di metallizzazione multilivello ad alta planarizzazione per dispositivi a semiconduttore, Application #: RM97A000431, 14 Luglio 1997